Fabrication of large-area GaN-based light-emitting diodes on Cu substrate

Jung Tang Chu*, Hung Wen Huang, Chih Chiang Kao, Wen Deng Liang, Fang I. Lai, Chen Fu Chu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


A large-area GaN-based light-emitting diode (LED) 1000 × 1000 μm2 in size with a p-side down configuration was fabricated using wafer bonding and laser lift-off (LLO) techniques. The thin GaN LED was transferred onto a copper substrate without peeling or cracks. The large-area LEDs showed a uniform light-emission pattern over entire defined mesa area without a transparent contact layer on the p-type GaN. The operating current of the large-area LEDs can be driven up to 1000 mA with continuously increasing light output-power. The light output-power is 240 mW with a driving current of 1000 mA. Large-area emission and high current operation make the LLO-LEDs applicable to high-power LED applications.

Original languageEnglish
Pages (from-to)2509-2511
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
StatePublished - 1 Apr 2005


  • GaN LEDs
  • Large-area light-emission LEDs
  • Laser lift-off (LLO)
  • Wafer bonding

Fingerprint Dive into the research topics of 'Fabrication of large-area GaN-based light-emitting diodes on Cu substrate'. Together they form a unique fingerprint.

Cite this