@inproceedings{45c7c6c07b55492888db17657aefe68a,
title = "Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process",
abstract = "Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.",
keywords = "Bio-template, InGaN, Neutral Beam Etching, Singal Quantum Well",
author = "Yi-Chun Lai and Akio Higo and Lee, {Chang Yong} and Cedric Thomas and Tomoyuki Tanikawa and Kanako Shojiki and Shigeyuki Kuboya and Ryuji Katayama and Takayuki Kiba and Pei-Chen Yu and Ichiro Yamashita and Akihiro Murayama and Seiji Samukawa",
year = "2015",
month = jul,
day = "27",
doi = "10.1109/NANO.2015.7388865",
language = "English",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1278--1281",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
address = "United States",
note = "null ; Conference date: 27-07-2015 Through 30-07-2015",
}