Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

Yi-Chun Lai, Akio Higo, Chang Yong Lee, Cedric Thomas, Tomoyuki Tanikawa, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Takayuki Kiba, Pei-Chen Yu, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1278-1281
Number of pages4
ISBN (Electronic)9781467381550
DOIs
StatePublished - 27 Jul 2015
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 27 Jul 201530 Jul 2015

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period27/07/1530/07/15

Keywords

  • Bio-template
  • InGaN
  • Neutral Beam Etching
  • Singal Quantum Well

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