Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

Yi-Chun Lai; Akio Higo; Chang Yong Lee; Cedric Thomas; Tomoyuki Tanikawa; Kanako Shojiki; Shigeyuki Kuboya; Ryuji Katayama; Takayuki Kiba; Pei-Chen Yu; Ichiro Yamashita; Akihiro Murayama; Seiji Samukawa

doi:10.1109/NANO.2015.7388865

Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

Yi-Chun Lai, Akio Higo, Chang Yong Lee, Cedric Thomas, Tomoyuki Tanikawa, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Takayuki Kiba, Pei-Chen Yu, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1278-1281
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388865
State	Published - 27 Jul 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 27 Jul 2015 → 30 Jul 2015

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country	Italy
City	Rome
Period	27/07/15 → 30/07/15

Keywords

Bio-template
InGaN
Neutral Beam Etching
Singal Quantum Well

Access to Document

10.1109/NANO.2015.7388865

Link to publication in Scopus

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Lai, Y-C., Higo, A., Lee, C. Y., Thomas, C., Tanikawa, T., Shojiki, K., Kuboya, S., Katayama, R., Kiba, T., Yu, P-C., Yamashita, I., Murayama, A., & Samukawa, S. (2015). Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1278-1281). [7388865] (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388865

Lai, Yi-Chun ; Higo, Akio ; Lee, Chang Yong ; Thomas, Cedric ; Tanikawa, Tomoyuki ; Shojiki, Kanako ; Kuboya, Shigeyuki ; Katayama, Ryuji ; Kiba, Takayuki ; Yu, Pei-Chen ; Yamashita, Ichiro ; Murayama, Akihiro ; Samukawa, Seiji. / Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1278-1281 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

@inproceedings{45c7c6c07b55492888db17657aefe68a,

title = "Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process",

abstract = "Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.",

keywords = "Bio-template, InGaN, Neutral Beam Etching, Singal Quantum Well",

author = "Yi-Chun Lai and Akio Higo and Lee, {Chang Yong} and Cedric Thomas and Tomoyuki Tanikawa and Kanako Shojiki and Shigeyuki Kuboya and Ryuji Katayama and Takayuki Kiba and Pei-Chen Yu and Ichiro Yamashita and Akihiro Murayama and Seiji Samukawa",

year = "2015",

month = jul,

day = "27",

doi = "10.1109/NANO.2015.7388865",

language = "English",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1278--1281",

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address = "United States",

note = "null ; Conference date: 27-07-2015 Through 30-07-2015",

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Lai, Y-C, Higo, A, Lee, CY, Thomas, C, Tanikawa, T, Shojiki, K, Kuboya, S, Katayama, R, Kiba, T, Yu, P-C, Yamashita, I, Murayama, A & Samukawa, S 2015, Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388865, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1278-1281, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 27/07/15. https://doi.org/10.1109/NANO.2015.7388865

Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. / Lai, Yi-Chun; Higo, Akio; Lee, Chang Yong; Thomas, Cedric; Tanikawa, Tomoyuki; Shojiki, Kanako; Kuboya, Shigeyuki; Katayama, Ryuji; Kiba, Takayuki; Yu, Pei-Chen; Yamashita, Ichiro; Murayama, Akihiro; Samukawa, Seiji.

IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1278-1281 7388865 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

AU - Lai, Yi-Chun

AU - Higo, Akio

AU - Lee, Chang Yong

AU - Thomas, Cedric

AU - Tanikawa, Tomoyuki

AU - Shojiki, Kanako

AU - Kuboya, Shigeyuki

AU - Katayama, Ryuji

AU - Kiba, Takayuki

AU - Yu, Pei-Chen

AU - Yamashita, Ichiro

AU - Murayama, Akihiro

AU - Samukawa, Seiji

PY - 2015/7/27

Y1 - 2015/7/27

N2 - Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

AB - Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

KW - Bio-template

KW - InGaN

KW - Neutral Beam Etching

KW - Singal Quantum Well

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DO - 10.1109/NANO.2015.7388865

M3 - Conference contribution

AN - SCOPUS:84964316664

T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

SP - 1278

EP - 1281

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 27 July 2015 through 30 July 2015

ER -

Lai Y-C, Higo A, Lee CY, Thomas C, Tanikawa T, Shojiki K et al. Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1278-1281. 7388865. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). https://doi.org/10.1109/NANO.2015.7388865