Fabrication of IGZO sputtering target and its applications to the preparation of thin-film transistor (TFT) devices

Chun Chieh Lo, Tsung-Eong Hsien*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A hybrid of chemical dispersion and mechanical grinding process was developed to fabricate the mixture of nano-scale In2O3, Ga2O3 and ZnO oxide powders at the atomic ratio 1:1:2. As revealed by x-ray diffraction (XRD) analysis, sputtering target containing sole IGZO4 phase could be obtained by sintering the oxide mixture pressed in disc form at temperatures ≥ 1300°C for 6 hrs. The IGZO target was then transferred to a sputtering system and the thin-film transistors (TFTs) containing amorphous IGZO channels were fabricated. Post-annealing at 300°C for 1 hr in air ambient was performed in order to improve the device performance. Electrical measurements indicated that the TFT samples with saturation mobility (μsat) = 14.7 cm2/V·s, threshold voltage (VTH) = 0.57 V, subthreshold swing (S.S.) = 0.45 V/decade and on/off ratio = 108 could be achieved.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages131-135
Number of pages5
Edition4
DOIs
StatePublished - 29 Dec 2010
EventWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 25 Apr 201030 Apr 2010

Publication series

NameECS Transactions
Number4
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period25/04/1030/04/10

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