In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ∼0.4 mA, and slope efficiencies of ∼0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA) 1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.
|Number of pages||8|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 6 May 2005|
|Event||Semiconductor and Organic Optoelectronic Materials and Devices - Beijing, China|
Duration: 9 Nov 2004 → 11 Nov 2004
- High-speed electronics