Fabrication of high-power InGaN-based light-emitting diode chips on pyramidally patterned sapphire substrate

Yi Ju Chen, Cheng-Huang Kuo, Chun Ju Tun, Shih Chieh Hsu, Yuh Jen Cheng, Cheng Yi Liu*

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

A pyramidal pattern was produced on a c-plane sapphire substrate by a mask-free etching process. Photoluminescence (PL) results show that a GaN-based light-emitting diode (LED) epilayer grown on the pyramidally patterned sapphire substrate has higher epitaxial quality than that grown on a standard flat c-plane sapphire substrate. When the input current is 350 mA, the average light output power of LED chips on the pyramidally patterned sapphire substrate is 37% larger than that of LED chips on a standard c-plane sapphire substrate. # 2010 The Japan Society of Applied Physics

Original languageEnglish
Article number020201
JournalJapanese Journal of Applied Physics
Volume49
Issue number2 Part 1
DOIs
StatePublished - 1 Feb 2010

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