Fabrication of high-performance ZnO thin-film transistors with submicrometer channel length

Horng-Chih Lin, Rong Jhe Lyu, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

A method was developed to fabricate ZnO thin-film transistors (TFTs) with submicrometer channel length. In this scheme, mature process techniques are used to form a suspending hardmask bridge on the wafer surface, which enables the subsequent construction of a TFT by the sequential deposition of gate oxide, ZnO channel layer, and Al source/drain contacts. Excellent electrical characteristics were demonstrated by the fabricated ZnO TFTs that show high ON/OFF current ratio (> 109), low subthreshold swing (89 mV/decade), and high field-effect mobility (41 cm2 V s). Very small variation in the device characteristics is also demonstrated.

Original languageEnglish
Article number6579637
Pages (from-to)1160-1162
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number9
DOIs
StatePublished - 19 Aug 2013

Keywords

  • Metal oxide
  • shadow mask
  • submicrometer
  • thin-film transistors
  • ZnO

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