Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

C. C. Chen, Yew-Chuhg Wu, T. F. Tung, H. Y. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages401-404
Number of pages4
Edition1
DOIs
StatePublished - 30 Dec 2010
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 26 Apr 201027 Apr 2010

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period26/04/1027/04/10

Fingerprint Dive into the research topics of 'Fabrication of high electrical performance NILC-TFTs using FSG buffer layer'. Together they form a unique fingerprint.

  • Cite this

    Chen, C. C., Wu, Y-C., Tung, T. F., & Wu, H. Y. (2010). Fabrication of high electrical performance NILC-TFTs using FSG buffer layer. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 401-404). (ECS Transactions; Vol. 28, No. 1). https://doi.org/10.1149/1.3375627