Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

Hung Wen Huang*, Chih Chiang Kao, Tao Hung Hsueh, Chang Chin Yu, Chia Feng Lin, Jung Tang Chu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl2/Ar flow rate of 50/20 seem, ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 × 10 9 to 3 × 1010 cm-2 and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150-50 Å and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III-V nanoscale photonic and electronic devices.

Original languageEnglish
Pages (from-to)125-129
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume113
Issue number2
DOIs
StatePublished - 25 Oct 2004

Keywords

  • Gallium nitride (GaN)
  • Inductively coupled plasma (ICP)
  • Nanorod
  • Nickel

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