Fabrication of GaAs quantum dots by modified droplet epitaxy

Fu Gow Tarntair, Wei Kai Hong, Tzu Kun Ku, Nan Jie She, Chia Fu Chen, Huang-Chung Cheng

Research output: Contribution to journalArticlepeer-review

100 Scopus citations

Abstract

We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observed by photoluminescence measurements. It was confirmed that this new modified droplet epitaxy method is promising for fabricating a high-quality GaAs/AlGaAs QD system.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number2 A
DOIs
StatePublished - 1 Feb 2000

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