Fabrication of deep lateral single-crystal-silicon blaze micro-grating by inductively-coupled-plasma reactive ion etch

Y. H. Lin*, C. J. Weng, C. Y. Su, W. Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a method by using a compensative structure assisted to fabricate deep lateral single-crystal-silicon (SCS) blaze micro-grating at Inductively-Coupled-Plasma Reactive Ion Etch (ICP-RIE). Due to the high resolution of blaze micro-grating, it's hard to maintain the teeth structure of blaze micro-grating under deep silicon etch in ICP-RIE process. Here, the independent rectangular structure and symmetrical structure to micro-grating is designed to obstruct the non-vertical plasma ion to etch the sidewall of micro-grating structure and to get better the profile control at deep micro-grating structure. The lateral silicon blaze micro-grating with 100 μm thickness by compensative structure assisted etch process have been successfully demonstrated this method.

Original languageEnglish
Title of host publication2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Pages689-692
Number of pages4
DOIs
StatePublished - 1 Jun 2012
Event7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, Japan
Duration: 5 Mar 20128 Mar 2012

Publication series

Name2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

Conference

Conference7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
CountryJapan
CityKyoto
Period5/03/128/03/12

Keywords

  • blaze graing
  • Inductively-Coupled-Plasma Reactive Ion Etch (ICP-RIE)

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