Fabrication of an ultra-nanocrystalline diamond-coated silicon wire array with enhanced field-emission performance

Yu Fen Tzeng*, Kao Hsiang Liu, Yen Chih Lee, Sue Jian Lin, I. Nan Lin, Chi Young Lee, Hsin-Tien Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Large-area ultra-nanocrystalline diamond-coated silicon nanowire (UNCD/SiNW) field-emitter arrays were prepared by the deposition of ultra-nanocrystalline diamond (UNCD) on the tips of arrays of silicon nanowires (SiNWs) with uniform diameters. The electron field-emission (EFE) behavior of UNCD/SiNW arrays as well as that of the SiNW arrays has been observed. The SiNWs exhibit good electron field-emission properties with turn-on fields (E 0) of about 7.6 V μm-1, which is superior to the EFE properties of planar-silicon materials. The turn-on fields are related to the diameter of the SiNWs. Coating the SiNWs with a UNCD film further improves their EFE properties. The threshold field for attaining Je = 0.1 mA cm-2 EFE current density is 16.0 V μm-1 for bare SiNWs and 10.2 V μm-1 for UNCD/SiNWs. The improvement in EFE properties due to the UNCD coating is presumably due to the lower work function of field emission of the UNCD materials, compared to that of the silicon materials.

Original languageEnglish
Article number435703
JournalNanotechnology
Volume18
Issue number43
DOIs
StatePublished - 31 Oct 2007

Fingerprint Dive into the research topics of 'Fabrication of an ultra-nanocrystalline diamond-coated silicon wire array with enhanced field-emission performance'. Together they form a unique fingerprint.

Cite this