Fabrication of amorphous Si thin-film transistors on an engineered parylene template using a direct separation process

C. C. Chiang*, D. S. Wuu, Y. P. Chen, T. H. Jaw, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

This article reports on the fabrication of flexible amorphous silicon (a-Si) thin-film transistors (TFTs) on a parylene template carried by a glass plate without any adhesive. The a-Si TFTs can be separated directly from the glass carrier after a process temperature up to 220°C. The performance of a-Si TFTs on the engineered parylene template (parylene/ SiNx /parylene) has nearly identical electrical characteristics as those of the TFTs directly on a glass substrate. After the 10 mm radius bending test for 104 times, the a-Si TFTs still exhibit good transistor behavior with the on-off current ratio exceeding 105 and electron mobility of 0.252 cm2 V s.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number1
DOIs
StatePublished - 1 Jan 2008

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