Abstract
This article reports on the fabrication of flexible amorphous silicon (a-Si) thin-film transistors (TFTs) on a parylene template carried by a glass plate without any adhesive. The a-Si TFTs can be separated directly from the glass carrier after a process temperature up to 220°C. The performance of a-Si TFTs on the engineered parylene template (parylene/ SiNx /parylene) has nearly identical electrical characteristics as those of the TFTs directly on a glass substrate. After the 10 mm radius bending test for 104 times, the a-Si TFTs still exhibit good transistor behavior with the on-off current ratio exceeding 105 and electron mobility of 0.252 cm2 V s.
Original language | English |
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Journal | Electrochemical and Solid-State Letters |
Volume | 11 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2008 |