Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

Chia Hua Chang*, Lu Che Huang, Che Yang Chiang, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this work, AlGaN/GaN HEMTs on silicon with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 × 100μm2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through high-frequency measurements, the device revealed a current gain cutoff frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz and an output power density of 5.0 W/mm at X-band.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages941-943
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
CountryTaiwan
CityKaohsiung
Period4/12/127/12/12

Keywords

  • AlGaN/GaN
  • anodic oxide
  • HEMTs
  • lithography
  • slant field plate

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