Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography

Ting En Hsieh, Lu Che Huang, Yueh Chin Lin, Chia Hua Chang, Huan Chung Wang, Edward Yi Chang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, AlGaN/GaN HEMTs with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The method is simple of cost effective. The 0.6 × 100μm2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance higher than 200 mS/mm and a breakdown voltage higher than 100 V. Through high-frequency measurements, the device revealed a current gain cut-off frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages744-746
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Publication series

Name2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Conference

Conference2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

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    Hsieh, T. E., Huang, L. C., Lin, Y. C., Chang, C. H., Wang, H. C., & Chang, E. Y. (2012). Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 744-746). [6417250] (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings). https://doi.org/10.1109/SMElec.2012.6417250