Fabrication of a gas sensor with a piezoelectric PZT film deposited by a novel hydrothermal microwave-assisted annealing

Fu-Hsiang Ko*, Yi Chieh Hsu, Menq Te Wang, Gue wha Steven Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

In this article, we use the piezoelectric material of PbZrxTi(1-x)O3 (PZT) to fabricate a thin film by sol-gel technique. The novel hydrothermal annealing under microwave system substitutes the conventional furnace annealing. The films from various reaction conditions are analyzed by scanning electron microscope and X-ray diffraction. In addition, the PZT film is used to fabricate the gas sensor. The resonant frequency of the developed PZT sensor is about 30 MHz and the sensing limit for organic vapour is estimated to be about 1 ppm.

Original languageEnglish
Pages (from-to)1300-1304
Number of pages5
JournalMicroelectronic Engineering
Volume84
Issue number5-8
DOIs
StatePublished - 1 May 2007

Keywords

  • Gas sensor
  • Microwave-assisted annealing
  • Piezoelectric PZT film
  • Sol-gel

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