Fabrication of 0.15-μ Γ-shaped Gate In0.52 Al0.48As/In0.6Ga0.4 metamorphic HEMTs using DUV lithography and tilt dry-etching technique

Yi Chung Lien*, Szu Hung Chen, Edward Yi Chang, Ching Ting Lee, Li Hsin Chu, Chia Yuan Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

An In0.52Al0.48As/In0.6Ga0.4 As metamorphic high-electron mobility transistor (MHEMT) with 0.15-μΓ-shaped gate using deep ultraviolet lithography and tilt dry-etching technique is demonstrated. The developed submicrometer gate technology is simple and of low cost as compared to the conventional E-beam lithography or other hybrid techniques. The gate length is controllable by adjusting the tilt angle during the dry-etching process. The fabricated 0.15-μ In0.52Al0.48 As/In0.6Ga0.4 MHEMT using this novel technique shows a saturated drain-source current of 680 mA/mm and a transconductance of 728 mS/mm. The fT and fmaxof the MHEMT are 130 and 180 GHz, respectively. The developed technique is a promising low-cost alternative to the conventional submicrometer E-beam gate technology used for the fabrication for GaAs MHEMTs and monolithic microwave integrated circuits.

Original languageEnglish
Pages (from-to)93-95
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number2
DOIs
StatePublished - 1 Feb 2007

Keywords

  • Γ-shaped gate
  • Deep ultraviolet (DUV) lithography
  • Metamorphic high-electron mobility transistors (MHEMTs)
  • Tilt dry-etching technique

Fingerprint Dive into the research topics of 'Fabrication of 0.15-μ Γ-shaped Gate In<sub>0.52</sub> Al<sub>0.48</sub>As/In<sub>0.6</sub>Ga<sub>0.4</sub> metamorphic HEMTs using DUV lithography and tilt dry-etching technique'. Together they form a unique fingerprint.

  • Cite this