Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory

Mu-Shih Yeh, Yung-Chun Wu, Min-Feng Hung, Kuang Cheng Liu, Yi-Ruei Jhan, Lun-Chun Chen, Chun-Yen Chang

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 10(4) program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.
Original languageEnglish
Article number331
JournalNanoscale Research Letters
Issue number8
DOIs
StatePublished - 22 Jun 2013

Keywords

  • Twin poly-Si; FinFET; TFT; Nonvolatile memory; Omega-gate; Nanowires; Three-dimensional; Flash memory
  • TEMPERATURE; EEPROM

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