This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 10(4) program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.
- Twin poly-Si; FinFET; TFT; Nonvolatile memory; Omega-gate; Nanowires; Three-dimensional; Flash memory
- TEMPERATURE; EEPROM
Yeh, M-S., Wu, Y-C., Hung, M-F., Liu, K. C., Jhan, Y-R., Chen, L-C., & Chang, C-Y. (2013). Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory. Nanoscale Research Letters, (8), . https://doi.org/10.1186/1556-276X-8-331