Fabrication and physical properties of radio frequency sputtered ZnMnSe thin films

Cheng Tzung Tsai, Der San Chuu*, Jiun Yueh Leou, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Zn1-xMnxSe thin films with various Mn concentrations were produced by the radio frequency sputtering technique. As the Mn concentration increased, it was found that two types of crystal structures (zinc blende and wurtzite) compete with each other. The grain size of the Zn1-xMnx Se thin films decreased as Mn concentration z was increased. Moreover, the zone-center optical phonons of Zn1-xMnxSe thin films exhibit an intermediate mode behavior which is consistent with that of the bulk crystals.

Original languageEnglish
Pages (from-to)4427-4430
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number7 A
DOIs
StatePublished - 1 Jul 1997

Keywords

  • Intermediate mode behavior
  • rf sputtering
  • Wurtzite
  • Zinc blende

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