Fabrication and optical properties of green emission semipolar {1011} InGaN/GaN MQWs selective grown on GaN nanopyramid arrays

Shih Pang Chang*, Jet Rung Chang, Ji Kai Huang, Jinchai Li, Yi Chen Chen, Kuok Pan Sou, Yun Jing Li, Hung Chih Yang, Ta Cheng Hsu, Tien-Chang Lu, Hao-Chung Kuo, Chun Yen Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report that the high crystalline and high efficiency green emission semipolar {1011} InGaN/GaN multiple quantum wells (MQWs) grown on the {1011} facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar {1011} InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of {10-11} MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the {1011} MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the {1011} planes are promising for solving the efficiency green gap of III-nitride light emitters.

Original languageEnglish
Title of host publicationCompound Semiconductors for Energy Applications and Environmental Sustainability - 2011
Pages37-42
Number of pages6
DOIs
StatePublished - 1 Jan 2012
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: 25 Apr 201129 Apr 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1324
ISSN (Print)0272-9172

Conference

Conference2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period25/04/1129/04/11

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