High-density magnesium (Mg)-doped gallium nitride (GaN) nanorods were fabricated by inductively coupled plasma reactive ion etching from a GaN film and had a mean length of approximately 50 nm. A large blue-shift was observed in the photoluminescence (PL) peak energy of Mg-doped GaN nanorods under HeCd laser (325 nm) excitation. The PL spectra of the nanorods show a typical donor-acceptor-pair (DAP) emission at approximately 3.0 eV with a large blue-shift compared to that of the Mg-doped GaN film. The blue-shift energy increases from 8 meV to 67 meV as the excitation intensity varies from 12 kW/cm2 to 56 kW/cm2. Possible reasons for the power dependence of the spectral shift in the PL emission energy are discussed.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|State||Published - 1 Apr 2005|
- Inductively coupled plasma