Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods

Ya Hsien Chang*, Tau Hung Hsueh, Fang I. Lai, Chun Wei Chang, Y. U. Chang-Chin, Hung Wen Huang, Chia Feng Lin, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

High-density magnesium (Mg)-doped gallium nitride (GaN) nanorods were fabricated by inductively coupled plasma reactive ion etching from a GaN film and had a mean length of approximately 50 nm. A large blue-shift was observed in the photoluminescence (PL) peak energy of Mg-doped GaN nanorods under HeCd laser (325 nm) excitation. The PL spectra of the nanorods show a typical donor-acceptor-pair (DAP) emission at approximately 3.0 eV with a large blue-shift compared to that of the Mg-doped GaN film. The blue-shift energy increases from 8 meV to 67 meV as the excitation intensity varies from 12 kW/cm2 to 56 kW/cm2. Possible reasons for the power dependence of the spectral shift in the PL emission energy are discussed.

Original languageEnglish
Pages (from-to)2657-2660
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
StatePublished - 1 Apr 2005

Keywords

  • GaN
  • Inductively coupled plasma
  • Micro-photoluminescence
  • Nanorod
  • Nanostructure

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