Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

J. R. Chang*, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, Hao-Chung Kuo, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Core-shell InGaN/GaN multiple quantum wells (MQWs) on GaN nanopillars were fabricated by top-down etching followed by epitaxial regrowth. The regrowth formed hexagonal sidewalls and pyramids on the nanopillars. The cathodoluminescence of MQWs blue shifts as the location moves from top to bottom on both the pillar sidewalls and pyramid facets, covering a spectral linewidth of about 100 nm. The MQWs on the pillar sidewalls have a higher InN fraction than those on the pyramid facets. The photoluminescent wavelength is stable over two orders of carrier density change due to the smaller quantum confined Stark effect on the nanopillar facets.

Original languageEnglish
Article number261103
JournalApplied Physics Letters
Volume100
Issue number26
DOIs
StatePublished - 25 Jun 2012

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