FABRICATION AND EVALUATION OF InSb MIS STRUCTURE PREPARED BY PHOTO-CHEMICAL VAPOR DEPOSITION.

Kai-Feng Huang*, J. S. Shie, J. J. Luo, J. S. Chen, S. J. Yang, S. L. Tu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Thin silicon dioxide films were prepared by photo chemical vapor deposition. IR absorption and Auger electron spectroscopy have shown that the dominant components of the oxide are silicon and oxygen with little amount of hydrogen. MIS capacitors were constructed on InSb substrates. C-V characteristics of the MIS capacitors were measured, and mid-gap interface state density of low 10**1**2 cm** minus **2eV** minus **1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, mid-gap interface state density was reduced to 5 multiplied by 10** minus **1**1 cm** minus **2eV** minus **1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsF.D. Morten, John S. Seeley
PublisherSPIE
Pages11-15
Number of pages5
ISBN (Print)0892526238
DOIs
StatePublished - 1 Dec 1986

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume588
ISSN (Print)0277-786X

Fingerprint Dive into the research topics of 'FABRICATION AND EVALUATION OF InSb MIS STRUCTURE PREPARED BY PHOTO-CHEMICAL VAPOR DEPOSITION.'. Together they form a unique fingerprint.

Cite this