Fabrication and enhanced field emission properties of novel silicon nanostructures

Srikanth Ravipati; Chang Jung Kuo; Jiann Shieh; Cheng Tung Chou; Fu-Hsiang Ko

doi:10.1016/j.microrel.2010.06.005

Fabrication and enhanced field emission properties of novel silicon nanostructures

Srikanth Ravipati, Chang Jung Kuo, Jiann Shieh^*, Cheng Tung Chou, Fu-Hsiang Ko

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/μm under current density of 0.01 mA/cm ² for two-tier patterns separated by respective 5 μm and 2 μm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices.

Original language	English
Pages (from-to)	1973-1976
Number of pages	4
Journal	Microelectronics Reliability
Volume	50
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2010.06.005
State	Published - 1 Dec 2010

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@article{575a30a8d20143a397f429da83d67144,

title = "Fabrication and enhanced field emission properties of novel silicon nanostructures",

abstract = "We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/μm under current density of 0.01 mA/cm 2 for two-tier patterns separated by respective 5 μm and 2 μm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices.",

author = "Srikanth Ravipati and Kuo, {Chang Jung} and Jiann Shieh and Chou, {Cheng Tung} and Fu-Hsiang Ko",

year = "2010",

month = dec,

day = "1",

doi = "10.1016/j.microrel.2010.06.005",

language = "English",

volume = "50",

pages = "1973--1976",

journal = "Microelectronics and Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Fabrication and enhanced field emission properties of novel silicon nanostructures

AU - Ravipati, Srikanth

AU - Kuo, Chang Jung

AU - Shieh, Jiann

AU - Chou, Cheng Tung

AU - Ko, Fu-Hsiang

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/μm under current density of 0.01 mA/cm 2 for two-tier patterns separated by respective 5 μm and 2 μm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices.

AB - We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/μm under current density of 0.01 mA/cm 2 for two-tier patterns separated by respective 5 μm and 2 μm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=78649448513&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2010.06.005

DO - 10.1016/j.microrel.2010.06.005

M3 - Article

AN - SCOPUS:78649448513

VL - 50

SP - 1973

EP - 1976

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

SN - 0026-2714

IS - 12

ER -