Fabrication and enhanced field emission properties of novel silicon nanostructures

Srikanth Ravipati, Chang Jung Kuo, Jiann Shieh*, Cheng Tung Chou, Fu-Hsiang Ko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/μm under current density of 0.01 mA/cm 2 for two-tier patterns separated by respective 5 μm and 2 μm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices.

Original languageEnglish
Pages (from-to)1973-1976
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number12
DOIs
StatePublished - 1 Dec 2010

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