Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

T. H. Hsueh*, Y. S. Chang, F. Lai, H. W. Huang, M. C. Ou-yang, C. W. Chang, Hao-Chung Kuo, S. C. Wang, J. K. Sheu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

Original languageEnglish
Pages (from-to)607-608
Number of pages2
JournalOSA Trends in Optics and Photonics Series
Volume97
StatePublished - 1 Jan 2004
EventInternational Quantum Electronics Conference, IQEC - San Francisco, CA, United States
Duration: 21 May 200426 May 2004

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