Fabrication and electrical transport properties of nickel monosilicide nanowires

Jeng-Tzong Sheu*, S. P. Yeh, S. T. Tsai, C. H. Lien

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages47-50
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Conference

Conference2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period11/07/0515/07/05

Keywords

  • Nickel silicide nanowires (NSNWs)
  • Rapid thermal annealing (RTA)
  • Scanning probe lithography (SPL)
  • Silicon nanowires (SINWs)
  • Silicon on Insulator (SOI)
  • Tetramethylammonium hydroxide (TMAH)

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  • Cite this

    Sheu, J-T., Yeh, S. P., Tsai, S. T., & Lien, C. H. (2005). Fabrication and electrical transport properties of nickel monosilicide nanowires. In 2005 5th IEEE Conference on Nanotechnology (pp. 47-50). [1500647] (2005 5th IEEE Conference on Nanotechnology; Vol. 2). https://doi.org/10.1109/NANO.2005.1500647