Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii

Fu Gow Tarntair*, Wei Kai Hong, Tzu Kun Ku, Nan Jie She, Chia Fu Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Various types of ultra sharp Si microtips and multitips with carbon-clading films were fabricated by microwave plasma chemical vapor deposition (MPCVD). The radii of these Si tips prepared by bias assisted carburization (BAC) can be reduced below 300 Å under a low deposition temperature (<550°C). Field emission characterization was performed in a high vacuum environment. With an applied anode voltage of 1100 V, emission currents of 169 μA, 198 μA, and 385 μA can be achieved from an array of 50 × 50 BAC-clad Si monotips, Si multitips via high bias, and Si multitips via the Ar presputtering technique, respectively. Both the auger electron spectroscopy (AES) and X-ray photo-electron spectroscopy (XPS) studies of the C 1 s peak suggest that the BAC-cladding is more likely to be a carbon-rich SiC layer or a SiC layer mixed with a small amount of diamond nuclei. This BAC-carbon can be used as an effective nucleation layer for further diamond nuclei. Due to the low field emission, low temperature, and large area growth capability, the sharp BAC-clad Si multitip field emitter arrays are attractive for flat panel display applications.

Original languageEnglish
Pages (from-to)432-437
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number2 A
DOIs
StatePublished - Feb 2000

Keywords

  • Bias assisted carburization
  • Diamond clad Si tips
  • Emitter array
  • Field emission
  • Microwave CVD
  • Si multitips

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