Fabrication and characterization of the Pd-silicided emitters for field-emission devices

Chih Chong Wang*, Tzu Kun Ku, Iing Jar Hsieh, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The structure of Pd-silicided field emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening (LTOS), metal coating, and furnace annealing. The silicided emitters are firstly identified by the bright-field, dark-field images, and diffraction patterns of transmission electron microscope (TEM). Under the applied voltage of 1100 V, the anode currents of the Pd-coated and silicided emitters are 16 μA and 26 μA, respectively. The values of threshold voltage VT for Pd-coated and silicided emitters are about 745V and 785V, respectively. The lower threshold voltage of the Pd-coated emitters is duo to the smaller emission work function of palladium. The emission work function of the Pd-silicided emitters is calculated to be 8.31 eV. Furthermore, the long and short-term current stabilities of silicided emitters is also better than that of Pd-coated ones. These results show that these silicided emitters have potential applications in vacuum microelectronics to obtain superior lifetime, reliability, and stability.

Original languageEnglish
Pages (from-to)3681-3685
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number6 SUPPL. A
DOIs
StatePublished - 1 Jun 1996

Keywords

  • Annealing
  • Field emitter
  • Micromachining
  • Pd
  • Sharpening
  • Silicided
  • TEM

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