Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel

Kuan Lin Yeh, Horng-Chih Lin*, Ren Wei Tsai, Ming Hsien Lee, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Schottky barrier thin-film transistors (SB TFT) with field-induced drain (FID) have recently been demonstrated to exhibit ambipolar capability with low off-state leakage current. In this study, we investigate and compare the characteristics of poly-Si SB TFTs with channel layer prepared by excimer laser crystallization (ELC) and solid-phase crystallization (SPC). It is shown that the use of ELC could greatly improve the device characteristics, comparing to the SPC counterparts. Excellent device performance with steep subthreshold slope and on/off current ratio higher than 108 for both p- and n-channel operations are demonstrated on a single device with ELC channel. The effects of sub-gate bias, channel length, and channel offset length, on device characteristics are also explored.

Original languageEnglish
Pages (from-to)2127-2131
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
StatePublished - 1 Apr 2003

Keywords

  • Field emission
  • Field-induced drain (FID)
  • Schottky-barrier
  • Thin-film transistor

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