Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels

Horng-Chih Lin*, Ming Hsien Lee, Chun Jung Su, Shih Wen Shen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The performance of thin-film transistors with a novel poly-Si nanowire channel prepared by solid-phase crystallization is investigated in this paper. As compared with conventional planar devices having self-aligned source/drain, the new devices show an improved on-current per unit width and better control over the short channel effects. The major conduction mechanism of the off-state leakage is identified as the gate-induced drain leakage, and it is closely related to the source/drain implant condition and the unique device structure.

Original languageEnglish
Pages (from-to)2471-2477
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume53
Issue number10
DOIs
StatePublished - 1 Dec 2006

Keywords

  • Leakage
  • Nanowires (NWs)
  • Plasma hydrogenation
  • Poly-Si
  • Short-channel effect
  • Thin-film transistor (TFT)

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