Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell

Binh Tinh Tran, Edward Yi Chang*, Hai Dang Trinh, Ching Ting Lee, Kartika Chandra Sahoo, Kung Liang Lin, Man Chi Huang, Hung Wei Yu, Tien Tung Luong, Chen Chen Chung, Chi Lang Nguyen

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Electro-optic characteristics of a fabricated n-In 0.4Ga 0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V oc) of 1.52 V and a short-circuit current density (J sc) of 8.68 mA/cm 2 with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V oc and In content in the In xGa 1-xN alloys for this type of solar cell was also derived.

Original languageEnglish
Pages (from-to)208-211
Number of pages4
JournalSolar Energy Materials and Solar Cells
Volume102
DOIs
StatePublished - 1 Jul 2012

Keywords

  • InGaN
  • ITO
  • MOCVD
  • Si
  • Solar cell

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    Tran, B. T., Chang, E. Y., Trinh, H. D., Lee, C. T., Sahoo, K. C., Lin, K. L., Huang, M. C., Yu, H. W., Luong, T. T., Chung, C. C., & Nguyen, C. L. (2012). Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell. Solar Energy Materials and Solar Cells, 102, 208-211. https://doi.org/10.1016/j.solmat.2012.03.030