Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates

Shih Yung Huang, Ray-Hua Horng*, Wei Kai Wang, Don Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates by a combination of laser lift-off and wafer bonding techniques. The RCLED structure consisted of an In-GaN/GaN multiple-quantum- well active layer between the top (5-pairs) and bottom (7.5-pairs) dielectric TiO2/SiO2 distributed Bragg reflector (DBR) with an optical reflectance of 85 and 99.9%, respectively. The cavity mode of the RCLED shows a linewidth of 5.5 nm at a main emission peak at 525 nm. The emission full width at half maximum can decrease from 48 to 35 nm, indicating the effect of the DBR microcavity. The quality factor for this resonant cavity structure was estimated to be approximately 100.

Original languageEnglish
Pages (from-to)2137-2140
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 31 Jul 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 28 Aug 20052 Sep 2005

Fingerprint Dive into the research topics of 'Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates'. Together they form a unique fingerprint.

Cite this