The InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) have been fabricated using hydrogen ion-implantation and laser liftoff techniques. The RCLEDs structure consisted of an InGaNGaN multiple-quantum-well active layer between the top (5 pairs) and bottom (7.5 pairs) dielectric Ti O2 Si O2 distributed Bragg reflectors with optical reflectance of 85% and 99.9%, respectively. The insulation layers of the RCLEDs with and without H+ implantation were formed by the hydrogen ion-implantation layers of 1× 1014 ions cm2 concentration and Si O2 film, respectively. The corresponding forward turn-on voltage at 0.6 kA cm2 dc current density injection were about ∼4.58 V and ∼4.55 V for the RCLEDs with and without H+ implantation. The light output intensity of the RCLEDs with H+ implantation is higher by a factor of 1.4 as compared to that of the similar structure without H+ implantation at a current density of 0.6 kA cm2. The directionality of RCLEDs with H+ implantation is superior to that of RCLEDs without H+ implantation.