Fabrication and characterization of InGaN-based green resonant-cavity light-emitting diodes using hydrogen ion-implantation techniques

Ray Hua Hornga*, Shih Yung Huang, Hao-Chung Kuo, Dong Sing Wuu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) have been fabricated using hydrogen ion-implantation and laser lift-off techniques. The RCLED structure consisted of an InGaN/GaN multiple-quantum-well active layer between top (5-pairs) and bottom (7.5-pairs) dielectric TiO2/SiO 2 distributed Bragg reflectors with optical reflectances of 85% and 99.9%, respectively. The insulating layers of the RCLEDs were formed by either hydrogen ion implanted layers of 1 x 1014 ions/cm2 or SiO2 films, respectively. The corresponding forward turn-on voltages for a 0.6 KA/cm2 dc injection current density were about 4.58 and 4.55 V, respectively. The light output intensity of the RCLEDs with H + implantation is higher by a factor of 1.4 compared with the SiO2 structure at a current density of 0.6 KA/cm2. The RCLEDs with H+ implantation have superior directionality compared to the RCLEDs without H+ implantation.

Original languageEnglish
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Pages183-190
Number of pages8
Edition2
DOIs
StatePublished - 1 Dec 2007
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200710 May 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period6/05/0710/05/07

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