In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm 2. These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 11 Oct 2005|
- Inductively coupled plasma (ICP)