Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods

Tao Hung Hsueh, Jinn Kong Sheu, Hung Wen Huang, Ya Hsien Chang, Miao Chia Ou-Yang, Hao-Chung Kuo, Shing Chung Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm 2. These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.

Original languageEnglish
Pages (from-to)7723-7725
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
StatePublished - 11 Oct 2005

Keywords

  • GaN
  • Inductively coupled plasma (ICP)
  • Micro-photoluminescence
  • MQWs
  • Nanorods

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