Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes

Chun Yuan Huang; Ying Chih Chen; Hsin-Chieh Yu; Yan Kuin Su; Ten Chin Wen; Tzung Fang Guo

doi:10.1109/ICONN.2008.4639279

Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes

Chun Yuan Huang^*, Ying Chih Chen, Hsin-Chieh Yu, Yan Kuin Su, Ten Chin Wen, Tzung Fang Guo

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-l,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m² as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38%, which indicates the contribution of QDs is minor. In addition, the post-annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.

Original language	English
Title of host publication	Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008
Pages	192-195
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2008.4639279
State	Published - 24 Nov 2008
Event	2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008 - Melbourne, VIC, Australia Duration: 25 Feb 2008 → 29 Feb 2008

Publication series

Name	Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

Conference

Conference	2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008
Country	Australia
City	Melbourne, VIC
Period	25/02/08 → 29/02/08

Keywords

CdSe/ZnS quantum dots
Hybrid light-emitting diodes
Polymer

Access to Document

10.1109/ICONN.2008.4639279

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Huang, C. Y., Chen, Y. C., Yu, H-C., Su, Y. K., Wen, T. C., & Guo, T. F. (2008). Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes. In Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008 (pp. 192-195). [4639279] (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008). https://doi.org/10.1109/ICONN.2008.4639279

Huang, Chun Yuan ; Chen, Ying Chih ; Yu, Hsin-Chieh ; Su, Yan Kuin ; Wen, Ten Chin ; Guo, Tzung Fang. / Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes. Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008. 2008. pp. 192-195 (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008).

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title = "Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes",

abstract = "We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-l,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m2 as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38%, which indicates the contribution of QDs is minor. In addition, the post-annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.",

keywords = "CdSe/ZnS quantum dots, Hybrid light-emitting diodes, Polymer",

author = "Huang, {Chun Yuan} and Chen, {Ying Chih} and Hsin-Chieh Yu and Su, {Yan Kuin} and Wen, {Ten Chin} and Guo, {Tzung Fang}",

year = "2008",

month = nov,

day = "24",

doi = "10.1109/ICONN.2008.4639279",

language = "English",

isbn = "1424415047",

series = "Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008",

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note = "null ; Conference date: 25-02-2008 Through 29-02-2008",

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Huang, CY, Chen, YC, Yu, H-C, Su, YK, Wen, TC & Guo, TF 2008, Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes. in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008., 4639279, Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 192-195, 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, Melbourne, VIC, Australia, 25/02/08. https://doi.org/10.1109/ICONN.2008.4639279

Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes. / Huang, Chun Yuan; Chen, Ying Chih; Yu, Hsin-Chieh; Su, Yan Kuin; Wen, Ten Chin; Guo, Tzung Fang.

Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008. 2008. p. 192-195 4639279 (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Huang, Chun Yuan

AU - Chen, Ying Chih

AU - Yu, Hsin-Chieh

AU - Su, Yan Kuin

AU - Wen, Ten Chin

AU - Guo, Tzung Fang

PY - 2008/11/24

Y1 - 2008/11/24

N2 - We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-l,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m2 as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38%, which indicates the contribution of QDs is minor. In addition, the post-annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.

AB - We have demonstrated the fabrication and characterization of single-layered hybrid polymer-quantum dot light-emitting diodes (PQD-LEDs) with the emissive composite film of 2,3-dibutoxy-l,4-poly(phenylene vinylene) (DBPPV) and CdSe/ZnS core/shell quantum dots (QDs). The electrical and optical characteristics are significantly influenced by the thickness of the emissive layer. When the thickness of composite film is thinned to about 103 nm, the maximum luminance of 4100 cd/m2 as well as maximum luminous efficiency of 1.35 cd/A can be achieved at 9.6 V and 7.6 V, respectively. However, the electroluminescence spectra reveal that the emission contribution is dominated by the emission from DBPPV. A maximum ratio of emission intensity of QDs to that of DBPPV is about 38%, which indicates the contribution of QDs is minor. In addition, the post-annealing effect on device performance was also investigated. In contrast to previous reports, no obvious improvement can be observed by post-annealing.

KW - CdSe/ZnS quantum dots

KW - Hybrid light-emitting diodes

KW - Polymer

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SN - 1424415047

SN - 9781424415045

T3 - Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

SP - 192

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BT - Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

Y2 - 25 February 2008 through 29 February 2008

ER -

Huang CY, Chen YC, Yu H-C, Su YK, Wen TC, Guo TF. Fabrication and characterization of hybrid DBPPV-CdSe/ZnS quantum dot light-emitting diodes. In Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008. 2008. p. 192-195. 4639279. (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008). https://doi.org/10.1109/ICONN.2008.4639279