Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 um

Tze Kun Ku*, B. B. Hsieh, Maw S. Chen, Chi Chang Wang, P. W. Wang, Iing Jar Hsieh, Huang-Chung Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High aspect-ratio single-crystal microtips have been fabricated using the semi-anisotropic dry etching technique. After the further oxidation sharpening process, arrays of 50 × 50 uniform sharp emitter tips has been achieved. The 200 angstrom-thick Cr metal was also coated on the surface of Si microtips to improve the performance. Furthermore, a modified self-aligned process of the gated field emitter arrays has been successfully developed to reduce the fabrication complexity. Employing this method, the tip radius of Si microemitter is about 200 angstrom, and the gate aperture can be easily reduced to about 0.3 μm. It will largely decrease the turn-on voltage of the field emission devices.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsWayne Bailey, M.Edward Motamedi, Fang-Chen Luo
Pages140-144
Number of pages5
DOIs
StatePublished - 1 Dec 1995
EventMicroelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications - Austin, TX, USA
Duration: 24 Oct 199524 Oct 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2641
ISSN (Print)0277-786X

Conference

ConferenceMicroelectronic Structures and Microelectromechanical Devices for Optical Processing and Multimedia Applications
CityAustin, TX, USA
Period24/10/9524/10/95

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    Ku, T. K., Hsieh, B. B., Chen, M. S., Wang, C. C., Wang, P. W., Hsieh, I. J., & Cheng, H-C. (1995). Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 um. In W. Bailey, M. E. Motamedi, & F-C. Luo (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 140-144). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2641). https://doi.org/10.1117/12.220935