Fabrication and characterization of film profile engineered ZnO TFTs with discrete gates

Rong Jhe Lyu, Horng-Chih Lin*, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

By virtue of the film-profile engineering scheme and properly designed device structure, ZnO TFTs with discrete bottom gates and sub-micron channels were fabricated and characterized. In the fabrication, a suspended bridge constructed over the bottom gate is used to tailor the profile of subsequently deposited films. Superior electrical characteristics in terms of ultrahigh ON/OFF current ratio ( $\sim 10^{10 ), steep sub-threshold swing ( $66\sim 108$ mV/dec), and very low off-state leakage current are demonstrated with the fabricated devices. Effects of channel lengths on the device characteristics are also explored. Because of more effective shadowing of the depositing species with a longer suspended bridge, the deposited films become thinner at the central channel. As a result, the device shows more positive turn-on voltage and better subthreshold swing with increasing channel length.

Original languageEnglish
Article number7021933
Pages (from-to)260-266
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number3
DOIs
StatePublished - 1 May 2015

Keywords

  • Metal oxide
  • ZnO
  • film profile engineering (FPE)
  • thin-film transistor

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