Fabrication and characterization of excimer laser crystallized double-gate low-temperature poly-silicon thin film transistors

Chun Chien Tsai*, Kai Fang Wer, Yao Jen Lee, I. Che Lee, Hsu Hsin Chen, Jyh Liang Wang, Hsai Wei Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this letter, high-performance low-temperature poly-Silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral silicon grains have been demonstrated by excimer laser crystallization (ELC). Therefore, the proposeed ELC DG TFTs exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages529-532
Number of pages4
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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    Tsai, C. C., Wer, K. F., Lee, Y. J., Lee, I. C., Chen, H. H., Wang, J. L., Chen, H. W., & Cheng, H-C. (2007). Fabrication and characterization of excimer laser crystallized double-gate low-temperature poly-silicon thin film transistors. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 529-532). (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).