Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

Chia Wei Hsu*, Chia Hao Kuo, Hsing Hui Hsu, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time- controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.

Original languageEnglish
Title of host publicationNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages313-316
Number of pages4
DOIs
StatePublished - 4 Oct 2011
Event6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
Duration: 20 Feb 201123 Feb 2011

Publication series

NameNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Conference

Conference6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
CountryTaiwan
CityKaohsiung
Period20/02/1123/02/11

Fingerprint Dive into the research topics of 'Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap'. Together they form a unique fingerprint.

Cite this