In this paper, we demonstrate a junctionless (JL) polysilicon-oxide- nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.
|Title of host publication||4th IEEE International NanoElectronics Conference, INEC 2011|
|State||Published - 26 Sep 2011|
|Event||4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan|
Duration: 21 Jun 2011 → 24 Jun 2011
|Name||Proceedings - International NanoElectronics Conference, INEC|
|Conference||4th IEEE International Nanoelectronics Conference, INEC 2011|
|Period||21/06/11 → 24/06/11|