Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels

Tuan Kai Su*, Tzu I. Tsai, Chun Jung Su, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we demonstrate a junctionless (JL) polysilicon-oxide- nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • junctionless
  • nanowire
  • SONOS

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