Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator

W. M. Liao*, S. W. Lin, S. S. Tseng, C. K. Lin, M. T. Kuo, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si0.95Ge 0.0.5/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.

Original languageEnglish
Pages (from-to)11-16
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume808
StatePublished - 1 Dec 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004

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