Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs

Ya Hsien Chang*, Hao-Chung Kuo, Fang I. Lai, Yi An Chang, C. Y. Lu, L. H. Laih, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

This paper presents the fabrication and characteristics of high-performance 850-mn InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW's composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents ∼0.4 mA and slope efficiencies ∼0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than ∼30% when the substrate temperature is raised from room temperature to 85 °C. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA)1/2 are demonstrated. The authors have accumulated life test data up to 1000 h at 70 °C/8 mA.

Original languageEnglish
Pages (from-to)2828-2833
Number of pages6
JournalJournal of Lightwave Technology
Volume22
Issue number12
DOIs
StatePublished - 1 Dec 2004

Keywords

  • High-speed electronics
  • InGaAsP-InGaP
  • Strain-compensated
  • Vertical-cavity surface-emitting lasers (VCSELs)

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