Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed bragg reflectors

Yu Chun Peng, Chih Chiang Kao, Hung Wen Huang, Jung Tang Chu, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang*, Chang Chin Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this paper, we report a GaN-based microcavity light-emitting diode (MCLED) which is composed of 25 pairs of high-reflectivity GaN/AIN distributed Bragg reflector (DBR) and 6 pairs of ex-situ deposited SiO2/TiO 2 dielectric mirrors. The electroluminescence peak of this structure matched well with the high reflectance area of the top and bottom DBRs, and shows a narrow emission of approximately 6.7 nm. The fabricated device also shows a more excellent performance on the stability of the emission peak wavelength while varying injection current density and operating temperature than a regular LED.

Original languageEnglish
Pages (from-to)3446-3448
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
StatePublished - 25 Apr 2006

Keywords

  • GaN
  • Light-emitting diode
  • MCLED
  • Microcavity

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