Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa

Ying Yu Lai, Yu Hsun Chou, Yu Sheng Wu, Yu-Pin Lan, Tien-chang Lu*, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this work, we have developed a simple GaN-based microcavity (MC) with an intracavity shallow etched mesa. The textured GaN-based MC incorporated two high-reflectivity dielectric Bragg mirrors and an InGaN/GaN multiple quantum well with a shallow etched mesa as an optical confined structure. Lasing and transverse optical confinement characteristics have been verified by measuring devices with different mesa diameters. A quality factor (Q) of 2600 and a threshold energy of 30 nJ have been observed in a 10-μm-diameter device. Such a cavity structure could be implanted into electrically pumped GaN vertical-cavity surface-emitting lasers for supporting efficient transverse confinement.

Original languageEnglish
Article number062101
JournalApplied Physics Express
Volume7
Issue number6
DOIs
StatePublished - 1 Jan 2014

Fingerprint Dive into the research topics of 'Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa'. Together they form a unique fingerprint.

Cite this