Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme

Y. J. Lee, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57° has the superior efficiency for light extraction.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
StatePublished - 1 Dec 2006
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 21 May 200626 May 2006

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Conference

ConferenceConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
CountryUnited States
CityLong Beach, CA
Period21/05/0626/05/06

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    Lee, Y. J., Lu, T., Kuo, H-C., Wang, S. C., Hwang, J. M., Hsu, T. C., Hsieh, M. H., & Jou, M. J. (2006). Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 [4628247] (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4628247