Fabricating GaN-based LEDs on (-2 0 1) β-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

Yu Pin Lan, Yen Chun Chen, Yi Yun Yeh, Shun Ming Hung

Research output: Contribution to journalArticle

Abstract

This study demonstrates two approaches to the growth of GaN-based LEDs on (-2 0 1)-oriented β-Ga2O3 single crystal substrates using metal-organic CVD under atmospheric pressure. One approach induces non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, whereas the other approach induces continuous growth. We observed the following reduction in the FWHM of X-ray diffraction rocking curves: GaN (0 0 2) on (-2 0 1) β-Ga2O3 substrate (from 464 to 342 arcsec) and GaN (1 0 2) (from 886 to 493 arcsec). An LED with six pairs of InGaN/GaN multiple quantum wells was successfully fabricated on the (-2 0 1) β-Ga2O3 single crystal substrate.

Original languageEnglish
Article number100908
JournalJapanese Journal of Applied Physics
Volume58
Issue number10
DOIs
StatePublished - Sep 2019

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