Fabricating 43-μm-thick and 12% efficient heterojunction silicon solar cells by using kerfless Si(111) substrates

Chen Hsun Du; Chien Hsun Chen; Teng Yu Wang; Jui Chung Hsiao; Chun Ming Yeh; Chun Heng Chen; J. Andrew Yeh; Peichen Yu

doi:10.1149/2.0171508jss

Fabricating 43-μm-thick and 12% efficient heterojunction silicon solar cells by using kerfless Si(111) substrates

Chen Hsun Du, Chien Hsun Chen, Teng Yu Wang, Jui Chung Hsiao, Chun Ming Yeh, Chun Heng Chen, J. Andrew Yeh, Peichen Yu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A 43-μm-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700°C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%.

Original language	English
Pages (from-to)	P319-P323
Journal	ECS Journal of Solid State Science and Technology
Volume	4
Issue number	8
DOIs	https://doi.org/10.1149/2.0171508jss
State	Published - 1 Jan 2015

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@article{61a3d908b29f465f8ca79f87967db2c3,

title = "Fabricating 43-μm-thick and 12% efficient heterojunction silicon solar cells by using kerfless Si(111) substrates",

abstract = "A 43-μm-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700°C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%.",

author = "Du, {Chen Hsun} and Chen, {Chien Hsun} and Wang, {Teng Yu} and Hsiao, {Jui Chung} and Yeh, {Chun Ming} and Chen, {Chun Heng} and Yeh, {J. Andrew} and Peichen Yu",

year = "2015",

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journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

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}

Fabricating 43-μm-thick and 12% efficient heterojunction silicon solar cells by using kerfless Si(111) substrates. / Du, Chen Hsun; Chen, Chien Hsun; Wang, Teng Yu; Hsiao, Jui Chung; Yeh, Chun Ming; Chen, Chun Heng; Yeh, J. Andrew; Yu, Peichen.

In: ECS Journal of Solid State Science and Technology, Vol. 4, No. 8, 01.01.2015, p. P319-P323.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabricating 43-μm-thick and 12% efficient heterojunction silicon solar cells by using kerfless Si(111) substrates

AU - Du, Chen Hsun

AU - Chen, Chien Hsun

AU - Wang, Teng Yu

AU - Hsiao, Jui Chung

AU - Yeh, Chun Ming

AU - Chen, Chun Heng

AU - Yeh, J. Andrew

AU - Yu, Peichen

PY - 2015/1/1

Y1 - 2015/1/1

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AB - A 43-μm-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700°C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%.

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