Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids

Chung Chieh Yang, Jing Jie Dai, Ren Hao Jiang, Jing Hui Zheng, Chia Feng Lin*, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations


Self-assembled inverted hexagonal pyramids with GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed through photoelectrochemical wet etching. The formation mechanism of the inverted hexagonal pyramid consisted with a lateral etching process of the InGaN/GaN active layer, bottom-up etching process from N-face GaN direction, and anisotropic etching process. The photoluminescence (PL) intensity of GaN:Mg peak was enhanced in this inverted hexagonal pyramid caused by the quantum confinement effect of this nano-structure. These inverted hexagonal pyramids, consisting of the p-type GaN:Mg, nano-disk InGaN/GaN active layer, and n-type GaN:Si layer, are suitable for nano-scale optoelectronic devices.

Original languageEnglish
Pages (from-to)589-592
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Issue number2-3
StatePublished - 1 Feb 2008

Fingerprint Dive into the research topics of 'Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids'. Together they form a unique fingerprint.

Cite this