Extremely low-threshold continue-wave operation of InGaAs quantum-well lasers with an AlAs native-oxide layer grown by MOCVD

Yan Kuin Su*, Jen Chieh Chang, Wei Cheng Chen, Hsin-Chieh Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Threshold current as low as 12.8 mA for InGaAs quantum-well lasers grown by MOCVD have been demonstrated by a laterally oxidized technique. This value is relatively low for a wider active region (cavity length is 50 μm, stripe width is 14 μm) compare to other paper, thus indicates a lower threshold current density of 130 A/cm2. With an thin AlAs confinement layer above the active region, improvement of CW operation and no obvious degradation of lasing performance for oxide-confined laser have been observed in this work.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages221-224
Number of pages4
DOIs
StatePublished - 1 Dec 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

Keywords

  • InGaAs
  • MOCVD
  • Native oxide
  • Quantum-well laser

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