Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique

Asamira Suzuki, Songbeak Choe, Yasuhiro Yamada, Shuichi Nagai, Miori Hiraiwa, Nobuyuki Otsuka, Daisuke Ueda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Fingerprint Dive into the research topics of 'Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy